transistor(pnp) features z low collector-emitter saturation voltage v ce(sat) z for low-frequency output amplification z complementary to 2sd2185 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -1 a emitter cut-off current i ebo v eb =-5v, i c =0 -1 a h fe1 v ce =-2v, i c =-200ma 120 340 dc current gain h fe2 v ce =-2v, i c =-1a 60 collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-50ma -0.3 v base- emitter saturation voltage v be(sat) i c =-1a, i b =-50ma -1..2 v transition frequency f t v ce =-10v, i c =50ma, f=200mhz 80 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 60 pf classification of h fe1 rank r s range 120-240 170-340 marking 1l sot-89 1. base 2. collector 3. emitter 1 2 3 2sb1 440 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2sb1 440 2 date:2011/05 www.htsemi.com semiconductor jinyu
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